The impact of Ir doping on the electrical properties of YbFe1−xIrxO3 perovskite-oxide compounds

• Published in: Journal of materials science. Materials in electronics 2020, Vol.31 (2), p.1731-1744
• Main Authors: Coskun, M., Polat, O., Coskun, F. M., Kurt, B. Zengin, Durmus, Z., Caglar, M., Turut, A.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemical synthesis; Chemistry and Materials Science; Dielectric properties; Dielectric relaxation; Doping; Electrical properties; Electrical resistivity; Materials Science; Optical and Electronic Materials; Organic chemistry; Perovskites; X ray photoelectron spectroscopy
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-019-02691-1

In this study, YbFe 1− x Ir x O 3 ( x  = 0, 0.01, 0.10) compounds were synthesized by solid-state reaction method. Chemical and structural analyses of studied compounds were carried out by XPS, SEM and EDX methods. SEM and STEM studies have shown that the particle size shrinks as doping ratio increases. Electrical/dielectric properties of the synthesized compounds were performed in wide-range frequency (1–10 7  Hz) and temperature (between − 100 and 100 °C with 20 °C steps) using Novocontrol Dielectric/Impedance Spectrometer. Frequency-dependent loss tangent plots exhibited that three dielectric relaxations take place for undoped YbFeO 3 (YbFO) compound, whereas two dielectric relaxations were observed for 1 and 10 mol% Ir-doped YbFO compounds. Resistivity measurement revealed that the 1 mol% Ir-substituted YbFO has lower resistivity than undoped.