Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra

β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence of the vibrational absorption of the VGa(1)-2D center i...

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Bibliographic Details
Published in:Journal of applied physics 2020-02, Vol.127 (5)
Main Authors: Portoff, Amanda, Venzie, Andrew, Stavola, Michael, Fowler, W. Beall, Pearton, Stephen J.
Format: Article
Language:English
Subjects:
Applied physics
Axes (reference lines)
Dependence
Extreme environments
Gallium oxides
Polarization
Vibrational spectra
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Summary:β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence of the vibrational absorption of the VGa(1)-2D center in monoclinic β-Ga2O3 provides a unique strategy for the determination of both the orientation of the principal dielectric axes in the near infrared and the direction of the vibrational transition moment of the defect.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5142376