Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance

• Published in: Physica status solidi. A, Applications and materials science Applications and materials science, 2020-02, Vol.217 (3), p.n/a
• Main Authors: Lu, Xing, Zhang, Xu, Jiang, Huaxing, Zou, Xinbo, Lau, Kei May, Wang, Gang
• Format: Article
• Language: English
• Subjects: Breakdown; breakdown voltages; Circuits; edge termination; Electric fields; Electric potential; Gallium oxides; Leakage current; Ozone; Recovery time; reverse recovery; Schottky barrier diodes; Schottky diodes; Silicon; Substrates; Switching; Voltage; β-Ga2O3
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201900497

Herein, vertical Schottky barrier diodes (SBDs) based on a bulk β‐Ga2O3 substrate are developed. The devices feature an ion‐implanted planar edge termination (ET) structure, which can effectively smoothen the electric field peak and reduce the electric field crowding at the Schottky junction edge. Greatly enhanced reverse blocking characteristics including ≈103× lower reverse leakage current and 1.5× higher breakdown voltage (VB) are achieved, whereas good forward conduction such as a reasonably high on‐state current density and near‐unity ideality factor is maintained. In addition, the switching performance of the fabricated vertical β‐Ga2O3 SBDs is investigated using a double‐pulse test circuit. When switching from an on‐state current of 350 mA to a reverse‐blocking voltage of −100 V, the vertical β‐Ga2O3 SBDs exhibit fast reverse recovery with a reverse recovery time (trr) of ≈14.1 ns and reverse recovery charge (Qrr) of ≈0.34 nC, outperforming the Si fast recovery diode (FRD) of similar ratings. The results indicate a great promise of vertical β‐Ga2O3 SBDs for high‐voltage fast switching applications. Herein, vertical β‐Ga2O3 Schottky barrier diodes (SBDs) with an ion‐implantation‐based planar edge termination structure are developed and their switching performance is also investigated. The devices exhibit greatly enhanced reverse blocking characteristics and fast switching performance. The results indicate a great promise of vertical β‐Ga2O3 SBDs for high‐voltage fast switching applications.