Cisplatin - A new wide bandgap semiconductor

Cisplatin is a well known anti-cancer drug which contains platinum metal - a heavy element with strong spin-orbit interaction. Here, we present results of experimental investigations of resistivity, magnetic properties, optical transmission, and X-ray photoelectron spectroscopy as well as ab-initio...

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Bibliographic Details
Published in:Journal of alloys and compounds 2020-03, Vol.817, p.153270, Article 153270
Main Authors: Goraus, Jerzy, Kubacki, Jerzy, Czerniewski, Jacek, Fijałkowski, Marcin
Format: Article
Language:English
Subjects:
Cisplatin
Electrical resistivity
Electronic structure
Heavy elements
Inorganic compounds
Magnetic permeability
Magnetic properties
Mathematical analysis
Optical properties
Photoelectrons
Physical properties
Platinum
Resistivity
Spin-orbit interactions
Wide bandgap semiconductor
Wide bandgap semiconductors
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Summary:Cisplatin is a well known anti-cancer drug which contains platinum metal - a heavy element with strong spin-orbit interaction. Here, we present results of experimental investigations of resistivity, magnetic properties, optical transmission, and X-ray photoelectron spectroscopy as well as ab-initio calculations. We have found that cisplatin is a wide bandgap semiconductor with a very interesting linear dependence of magnetic susceptibility with temperature. As a relatively simple inorganic compound, it is an interesting object of studies which compare calculated electronic structure and measured physical properties. The measured width of the bandgap is between 1.9 eV (resistivity) and 2.5 eV (optical transmission), hence it is in general agreement with our results of ab-initio calculations which predict a bandgap of similar width. •Resistivity, optical transmission and XPS techniques confirm semiconducting behavior.•Bandgap obtained from DFT calculations agrees well with experimental results.•Linear term in diamagnetic susceptibility is related to bandgap change.•The positions of Cl and N atoms in the unit cell are not equivalent in unit cell.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.153270