Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes

InxGa1−xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p–i–n diodes on ( 20 2 ¯ 1 ¯) and ( 20 2 ¯ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measu...

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Bibliographic Details
Published in:Applied physics letters 2020-02, Vol.116 (6)
Main Authors: Freytag, Stefan, Winkler, Michael, Goldhahn, Rüdiger, Wernicke, Tim, Rychetsky, Monir, Koslow, Ingrid L., Kneissl, Michael, Dinh, Duc V., Corbett, Brian, Parbrook, Peter J., Feneberg, Martin
Format: Article
Language:English
Subjects:
Applied physics
Electric potential
Electroluminescence
Gallium nitrides
Indium gallium nitrides
Organic light emitting diodes
Perturbation methods
Photoelectric effect
Photoelectric emission
Polarization
Quantum wells
Substrates
Voltage
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Summary:InxGa1−xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p–i–n diodes on ( 20 2 ¯ 1 ¯) and ( 20 2 ¯ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the ( 20 2 ¯ 1 ¯) sample (x = 0.18), the flatband voltage is found at + 1   V corresponding to a polarization field of − 458   kV / cm. For the ( 20 2 ¯ 1 ) sample (x = 0.13), the polarization field is estimated to be ≈ + 330   kV / cm at flatband voltage higher than turn-on voltage of this light emitting diode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5134952