Ultraviolet radiation-induced photovoltaic action in γ-CuI/β-Ga2O3 heterojunction

• Published in: Materials letters 2020-03, Vol.262, p.127074, Article 127074
• Main Authors: Ayhan, Muhammed Emre, Shinde, Mandar, Todankar, Bhagyashri, Desai, Pradeep, Ranade, Ajinkya K., Tanemura, Masaki, Kalita, Golap
• Format: Article
• Language: English
• Subjects: Beta-gallium oxide; Copper iodide; Electrical properties; Gallium oxides; Heterojunction devices; Heterostructures; Materials science; Photoelectric effect; Photoelectric emission; Photovoltaic action; Radiation effects; Semiconductors; Solar-blind radiation; Ultraviolet radiation; Vacuum thermal evaporation
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2019.127074

Demonstrated the formation of a heterojunction device with γ-phase copper iodide and beta-gallium oxide obtaining excellent photovoltage and photocurrent for solar-blind ultraviolet light irradiation. [Display omitted] •Demonstrated the formation of a heterojunction device with γ-phase copper iodide and beta-gallium oxide.•Ultraviolet radiation-induced photovoltaic action is obtained with excellent photovoltage and photocurrent.•The heterojunction device showed a photovoltaic action under solar-blind radiation (254 nm) with photocurrent of 2.49 mA/W.•The obtained device properties of γ-CuI/β‐Ga2O3 can be significant for self-powered UV photodetector applications. We report on the fabrication of γ-phase copper iodide (γ-CuI) and beta-gallium oxide (β-Ga2O3) heterostructure device and obtaining the ultraviolet (UV) radiation responsive photovoltaic action. The crystalline γ-CuI with predominant (1 1 1) plane orientation was deposited on the β-Ga2O3 by thermal evaporation process under vacuum condition. The electrical analysis revealed that the γ-CuI/β‐Ga2O3 heterojunction possess an excellent rectifying diode characteristic with high rectification ratio and turn-on voltage. The fabricated heterojunction device showed a photovoltaic action under solar-blind UV irradiation (254 nm) with outstanding photovoltage of 0.706 V and photocurrent of 2.49 mA/W. The device also showed a photovoltaic action under illumination of 365 nm and 300–400 nm wavelength of UV light, corresponding to absorption due to the γ-CuI layer. The UV irradiation-induced photovoltaic action in the γ-CuI/β‐Ga2O3 with outstanding photovoltage and excellent diode characteristics can be significant for self-powered UV photodetector applications.