2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconduct...

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Bibliographic Details
Published in:The European physical journal. B, Condensed matter physics Condensed matter physics, 2020-02, Vol.93 (2), Article 32
Main Authors: Fatahi, Negin, Hoat, D. M., Laref, Amel, Amirian, Shorin, Reshak, A. H., Naseri, Mosayeb
Format: Article
Language:English
Subjects:
Analysis
Chemical properties
Complex Systems
Condensed Matter Physics
Density functional theory
Density functionals
Dimensional stability
Electric waves
Electrical conductivity
Electromagnetic radiation
Electromagnetic waves
Energy gap
First principles
Fluid- and Aerodynamics
Graphene
Monolayers
Optical properties
Physics
Physics and Astronomy
Regular Article
Solid State Physics
Specific gravity
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Summary:The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of ~2.00. This band gap can be effectively modulated by external strains . Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum. Graphical abstract
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2020-100543-6