Electron bistability and switching effects in Mo/p-CdTe/Mo structure

It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage o...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2020-03, Vol.31 (5), p.3855-3860
Main Authors: Khrypunov, G. S., Nikitin, V. O., Rezinkin, O. L., Drozdov, A. N., Meriuts, A. V., Pirohov, O. V., Khrypunov, M. G., Kirichenko, M. V., Danyliuk, A. R.
Format: Article
Language:English
Subjects:
Bistability
Cadmium telluride
Characterization and Evaluation of Materials
Chemistry and Materials Science
Contact resistance
Current pulses
Current voltage characteristics
Electric contacts
Electrical resistivity
Materials Science
Optical and Electronic Materials
Phase transitions
Radiation
Transistors
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Summary:It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-02926-6