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Electron bistability and switching effects in Mo/p-CdTe/Mo structure
It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage o...
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Published in: | Journal of materials science. Materials in electronics 2020-03, Vol.31 (5), p.3855-3860 |
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container_title | Journal of materials science. Materials in electronics |
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creator | Khrypunov, G. S. Nikitin, V. O. Rezinkin, O. L. Drozdov, A. N. Meriuts, A. V. Pirohov, O. V. Khrypunov, M. G. Kirichenko, M. V. Danyliuk, A. R. |
description | It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered. |
doi_str_mv | 10.1007/s10854-020-02926-6 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2356818486</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2356818486</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-1d2d48f72b8f5b668fa9ac0b9b9d6aec0929052ea85bd19a567183de1efc3b4e3</originalsourceid><addsrcrecordid>eNp9kEtLAzEUhYMoWKt_wNWA69g8JplkKbU-oMVNBXchz5pSZ2qSQfrvnTqCOxeXs_nOufABcI3RLUaomWWMBKshImg4STjkJ2CCWUNhLcjbKZggyRpYM0LOwUXOW4QQr6mYgPvFztuSurYyMRdt4i6WQ6VbV-WvWOx7bDeVD2FgchXbatXN9nDu1n626qpcUm9Ln_wlOAt6l_3Vb07B68NiPX-Cy5fH5_ndElqKZYHYEVeL0BAjAjOci6CltshIIx3X3iJJJGLEa8GMw1Iz3mBBncc-WGpqT6fgZtzdp-6z97mobdendnipCGVcYFELPlBkpGzqck4-qH2KHzodFEbqaEuNttRgS_3YUscSHUt5gNuNT3_T_7S-AUm4bR0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2356818486</pqid></control><display><type>article</type><title>Electron bistability and switching effects in Mo/p-CdTe/Mo structure</title><source>Springer Nature</source><creator>Khrypunov, G. S. ; Nikitin, V. O. ; Rezinkin, O. L. ; Drozdov, A. N. ; Meriuts, A. V. ; Pirohov, O. V. ; Khrypunov, M. G. ; Kirichenko, M. V. ; Danyliuk, A. R.</creator><creatorcontrib>Khrypunov, G. S. ; Nikitin, V. O. ; Rezinkin, O. L. ; Drozdov, A. N. ; Meriuts, A. V. ; Pirohov, O. V. ; Khrypunov, M. G. ; Kirichenko, M. V. ; Danyliuk, A. R.</creatorcontrib><description>It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-02926-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Bistability ; Cadmium telluride ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Contact resistance ; Current pulses ; Current voltage characteristics ; Electric contacts ; Electrical resistivity ; Materials Science ; Optical and Electronic Materials ; Phase transitions ; Radiation ; Transistors</subject><ispartof>Journal of materials science. Materials in electronics, 2020-03, Vol.31 (5), p.3855-3860</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2020). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-1d2d48f72b8f5b668fa9ac0b9b9d6aec0929052ea85bd19a567183de1efc3b4e3</citedby><cites>FETCH-LOGICAL-c319t-1d2d48f72b8f5b668fa9ac0b9b9d6aec0929052ea85bd19a567183de1efc3b4e3</cites><orcidid>0000-0002-0818-1809</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Khrypunov, G. S.</creatorcontrib><creatorcontrib>Nikitin, V. O.</creatorcontrib><creatorcontrib>Rezinkin, O. L.</creatorcontrib><creatorcontrib>Drozdov, A. N.</creatorcontrib><creatorcontrib>Meriuts, A. V.</creatorcontrib><creatorcontrib>Pirohov, O. V.</creatorcontrib><creatorcontrib>Khrypunov, M. G.</creatorcontrib><creatorcontrib>Kirichenko, M. V.</creatorcontrib><creatorcontrib>Danyliuk, A. R.</creatorcontrib><title>Electron bistability and switching effects in Mo/p-CdTe/Mo structure</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.</description><subject>Bistability</subject><subject>Cadmium telluride</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Contact resistance</subject><subject>Current pulses</subject><subject>Current voltage characteristics</subject><subject>Electric contacts</subject><subject>Electrical resistivity</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Phase transitions</subject><subject>Radiation</subject><subject>Transistors</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEUhYMoWKt_wNWA69g8JplkKbU-oMVNBXchz5pSZ2qSQfrvnTqCOxeXs_nOufABcI3RLUaomWWMBKshImg4STjkJ2CCWUNhLcjbKZggyRpYM0LOwUXOW4QQr6mYgPvFztuSurYyMRdt4i6WQ6VbV-WvWOx7bDeVD2FgchXbatXN9nDu1n626qpcUm9Ln_wlOAt6l_3Vb07B68NiPX-Cy5fH5_ndElqKZYHYEVeL0BAjAjOci6CltshIIx3X3iJJJGLEa8GMw1Iz3mBBncc-WGpqT6fgZtzdp-6z97mobdendnipCGVcYFELPlBkpGzqck4-qH2KHzodFEbqaEuNttRgS_3YUscSHUt5gNuNT3_T_7S-AUm4bR0</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Khrypunov, G. S.</creator><creator>Nikitin, V. O.</creator><creator>Rezinkin, O. L.</creator><creator>Drozdov, A. N.</creator><creator>Meriuts, A. V.</creator><creator>Pirohov, O. V.</creator><creator>Khrypunov, M. G.</creator><creator>Kirichenko, M. V.</creator><creator>Danyliuk, A. R.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-0818-1809</orcidid></search><sort><creationdate>20200301</creationdate><title>Electron bistability and switching effects in Mo/p-CdTe/Mo structure</title><author>Khrypunov, G. S. ; Nikitin, V. O. ; Rezinkin, O. L. ; Drozdov, A. N. ; Meriuts, A. V. ; Pirohov, O. V. ; Khrypunov, M. G. ; Kirichenko, M. V. ; Danyliuk, A. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-1d2d48f72b8f5b668fa9ac0b9b9d6aec0929052ea85bd19a567183de1efc3b4e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Bistability</topic><topic>Cadmium telluride</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Contact resistance</topic><topic>Current pulses</topic><topic>Current voltage characteristics</topic><topic>Electric contacts</topic><topic>Electrical resistivity</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Phase transitions</topic><topic>Radiation</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khrypunov, G. S.</creatorcontrib><creatorcontrib>Nikitin, V. O.</creatorcontrib><creatorcontrib>Rezinkin, O. L.</creatorcontrib><creatorcontrib>Drozdov, A. N.</creatorcontrib><creatorcontrib>Meriuts, A. V.</creatorcontrib><creatorcontrib>Pirohov, O. V.</creatorcontrib><creatorcontrib>Khrypunov, M. G.</creatorcontrib><creatorcontrib>Kirichenko, M. V.</creatorcontrib><creatorcontrib>Danyliuk, A. R.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ProQuest advanced technologies & aerospace journals</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials science collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khrypunov, G. S.</au><au>Nikitin, V. O.</au><au>Rezinkin, O. L.</au><au>Drozdov, A. N.</au><au>Meriuts, A. V.</au><au>Pirohov, O. V.</au><au>Khrypunov, M. G.</au><au>Kirichenko, M. V.</au><au>Danyliuk, A. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron bistability and switching effects in Mo/p-CdTe/Mo structure</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-03-01</date><risdate>2020</risdate><volume>31</volume><issue>5</issue><spage>3855</spage><epage>3860</epage><pages>3855-3860</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>It has been experimentally shown that in a simple metal–semiconductor-metal structure with ohmic contacts, a reversible transition from a high-resistance state to a state with high electrical conductivity is possible under the influence of short current pulses of 80-ns duration with a peak voltage of more than 20 V. It was established that after the breakdown under static voltage, the structure irreversibly goes into a state with high electrical conductivity. At the same time, sections with negative differential resistance and negative differential conductivity appear on its low-frequency current–voltage characteristics at voltages less than 1 V. The most probable physical mechanisms that can provide such current–voltage characteristics are considered.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-02926-6</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-0818-1809</orcidid></addata></record> |
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subjects | Bistability Cadmium telluride Characterization and Evaluation of Materials Chemistry and Materials Science Contact resistance Current pulses Current voltage characteristics Electric contacts Electrical resistivity Materials Science Optical and Electronic Materials Phase transitions Radiation Transistors |
title | Electron bistability and switching effects in Mo/p-CdTe/Mo structure |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T09%3A45%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electron%20bistability%20and%20switching%20effects%20in%20Mo/p-CdTe/Mo%20structure&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Khrypunov,%20G.%20S.&rft.date=2020-03-01&rft.volume=31&rft.issue=5&rft.spage=3855&rft.epage=3860&rft.pages=3855-3860&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-020-02926-6&rft_dat=%3Cproquest_cross%3E2356818486%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c319t-1d2d48f72b8f5b668fa9ac0b9b9d6aec0929052ea85bd19a567183de1efc3b4e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2356818486&rft_id=info:pmid/&rfr_iscdi=true |