Effect of thermal evolution of point defects on the electrical properties of nitrogen-implanted ZnO thin films

Raman backscattering spectroscopy and X-ray photoelectron spectroscopy have been applied to study thermal evolution of point defects as a function of post-annealing temperature in nitrogen-implanted ZnO thin films (ZnO:N). Zn i -related donor defects (e.g., Zn i -N O complexes or Zn i clusters) are...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2020-03, Vol.31 (5), p.4208-4213
Main Authors: Li, Wanjun, Wang, Chunni, Ma, Jianwen, Zhang, Hong, Xiong, Yuanqiang, Li, Honglin, Ye, Lijuan, Ruan, Haibo, Qin, Guoping, Fang, Liang, Kong, Chunyang
Format: Article
Language:English
Subjects:
Annealing
Backscattering
Characterization and Evaluation of Materials
Chemistry and Materials Science
Defect annealing
Electrical properties
Electrical resistivity
Ion implantation
Materials Science
Nitrogen
Optical and Electronic Materials
Photoelectrons
Point defects
Self compensation
Spectrum analysis
Thermal evolution
Thin films
Zinc oxide
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Summary:Raman backscattering spectroscopy and X-ray photoelectron spectroscopy have been applied to study thermal evolution of point defects as a function of post-annealing temperature in nitrogen-implanted ZnO thin films (ZnO:N). Zn i -related donor defects (e.g., Zn i -N O complexes or Zn i clusters) are prone to dissociation to form a freely moving isolated Zn i defect by post-annealing process, which is extremely advantageous for achieving a p-type transition of the ZnO:N film. However, lots of N i atoms induced by ion implantation could migrate to the near-surface of the films to form NC/NH/NO species with increasing post-annealing temperature, resulting in a lower concentration of N O acceptor defects in ZnO:N films. In addition, although post-annealing at higher temperatures can form more No acceptor defects, the newly generated (N 2 ) O double donor defects have a severe self-compensating effect. Consequently, the concentration of both the Zn i -related donors and effective acceptors gradually decreases at elevated post-annealing temperatures, which is the reason why all ZnO:N films present n-type conductivity and do not convert to p-type conductivity.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-02973-z