Resistivity profile of epitaxial layer for the new ALICE ITS sensor

Wafers with different epitaxial layer thicknesses of 12, 18, 20, 25, 30 and 40 μm and high resistivities ranging from 0.03 to 8.0 kΩċcm have been investigated in this study. To verify their properties, surface resistivity measurement, scanning electron microscopy inspection and spreading resistance...

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Bibliographic Details
Published in:Journal of instrumentation 2019-05, Vol.14 (5), p.T05006-T05006
Main Authors: Prabket, J., Poonsawat, W., Kobdaj, C., Naeosuphap, S., Yan, Y., Jeamsaksiri, W., Yamwong, W., Chaowicharat, E., Hruanun, C., Poyai, A.
Format: Article
Language:English
Subjects:
Electrical resistivity
Epitaxy
Inspection
Surface resistivity
Thickness
Wafers
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Summary:Wafers with different epitaxial layer thicknesses of 12, 18, 20, 25, 30 and 40 μm and high resistivities ranging from 0.03 to 8.0 kΩċcm have been investigated in this study. To verify their properties, surface resistivity measurement, scanning electron microscopy inspection and spreading resistance profiling have been performed. The results indicate that wafers with a 25-μm epitaxial thickness are well-suited to our requirements for use as a starting material for ALPIDE chip production in the ALICE ITS upgrade project.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/14/05/T05006