Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p -type conduction and a buffer silicon carbide (SiC) layer and on vicinal planes are investigated. The results of studies of the polar properties by two indepen...

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Bibliographic Details
Published in:Physics of the solid state 2019-12, Vol.61 (12), p.2386-2391
Main Authors: Sergeeva, O. N., Solnyshkin, A. V., Kiselev, D. A., Il’ina, T. S., Kukushkin, S. A., Sharofidinov, Sh. Sh, Kaptelov, E. Yu, Pronin, I. P.
Format: Article
Language:English
Subjects:
Aluminum
Aluminum nitride
Buffer layers
Dielectric properties
Epitaxial growth
Ferroelectricity
Physics
Physics and Astronomy
Pyroelectricity
Silicon carbide
Silicon substrates
Solid State Physics
Thin films
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Summary:Dielectric and polar properties of aluminum nitride (AlN) thin films epitaxially grown on differently oriented silicon substrates with the p -type conduction and a buffer silicon carbide (SiC) layer and on vicinal planes are investigated. The results of studies of the polar properties by two independent methods—the dynamic pyroelectric effect and the piezoresponse force microscopy—show that the SiC buffer layer application considerably improves polar properties of the aluminum nitride thin layer.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783419120485