Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

The formation of GaN nanocrystals on the graphene-like AlN ( g -AlN) modification and graphene-like ( g -Si 3 N 3 ) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g -Si 3 N 3 surface leads to the formation of misoriented nanocrys...

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Bibliographic Details
Published in:Physics of the solid state 2019-12, Vol.61 (12), p.2329-2334
Main Authors: Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Yu. G., Kozhukhov, A. S., Aleksandrov, I. A., Rzheutski, N. V., Lebiadok, E. V., Razumets, E. A., Zhuravlev, K. S.
Format: Article
Language:English
Subjects:
Aluminum nitride
Ammonia
Boron nitride
Epitaxial growth
Gallium nitrides
Graphene
Graphite
Lattice parameters
Molecular beam epitaxy
Nanocrystals
Parameter modification
Physics
Physics and Astronomy
Quantum dots
Semiconductors
Silicon nitride
Solid State Physics
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Summary:The formation of GaN nanocrystals on the graphene-like AlN ( g -AlN) modification and graphene-like ( g -Si 3 N 3 ) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g -Si 3 N 3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g -AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA + (hexagonal boron nitride structure) layers have been calculated.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783419120308