Photon counting microstrip X-ray detectors with GaAs sensors

High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we asses...

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Bibliographic Details
Published in:Journal of instrumentation 2018-01, Vol.13 (1), p.C01046-C01046, Article C01046
Main Authors: Ruat, M., Andrä, M., Bergamaschi, A., Barten, R., Brückner, M., Dinapoli, R., Fröjdh, E., Greiffenberg, D., Lopez-Cuenca, C., Lozinskaya, A.D., Mezza, D., Mozzanica, A., Novikov, V.A., Ramilli, M., Redford, S., Ruder, C., Schmitt, B., Shi, X., Thattil, D., Tinti, G., Tolbanov, O.P., Tyazhev, A., Vetter, S., Zarubin, A.N., Zhang, J.
Format: Article
Language:English
Subjects:
Diffusion coefficient
Leakage current
Linearity
Material properties
Photons
Sensors
Silicon
X ray detectors
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Summary:High-Z sensors are increasingly used to overcome the poor efficiency of Si sensors above 15 keV, and further extend the energy range of synchrotron and FEL experiments. Detector-grade GaAs sensors of 500 μm thickness offer 98% absorption efficiency at 30 keV and 50% at 50 keV . In this work we assess the usability of GaAs sensors in combination with the MYTHEN photon-counting microstrip readout chip developed at PSI. Different strip length and pitch are compared, and the detector performance is evaluated in regard of the sensor material properties. Despite increased leakage current and noise, photon-counting strips mounted with GaAs sensors can be used with photons of energy as low as 5 keV, and exhibit excellent linearity with energy. The charge sharing is doubled as compared to silicon strips, due to the high diffusion coefficient of electrons in GaAs.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/13/01/C01046