Tests of UFXC32k chip with CdTe pixel detector

The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe se...

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Bibliographic Details
Published in:Journal of instrumentation 2018-02, Vol.13 (2), p.C02014-C02014
Main Authors: Maj, P., Taguchi, T., Nakaye, Y.
Format: Article
Language:English
Subjects:
Charge materials
Leakage current
Pixels
Sensors
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Summary:The paper presents the performance of the UFXC32K—a hybrid pixel detector readout chip working with CdTe detectors. The UFXC32K has a pixel pitch of 75 μm and can cope with both input signal polarities. This functionality allows operating with widely used silicon sensors collecting holes and CdTe sensors collecting electrons. This article describes the chip focusing on solving the issues connected to high-Z sensor material, namely high leakage currents, slow charge collection time and thick material resulting in increased charge-sharring effects. The measurements were conducted with higher X-ray energies including 17.4 keV from molybdenum. Conclusions drawn inside the paper show the UFXC32K's usability for CdTe sensors in high X-ray energy applications.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/13/02/C02014