Lab and test beam results of irradiated silicon sensors with modified ATLAS pixel implantations

In Dortmund, planar silicon pixel sensors were designed with modified n+-implantations and produced in n+-in-n sensor technology. Baseline for these new designs was the layout of the IBL planar silicon pixel sensor with a 250μm×50μm pitch. The different implantation shapes are intended to cause elec...

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Bibliographic Details
Published in:Journal of instrumentation 2018-11, Vol.13 (11), p.C11004-C11004
Main Authors: Weers, M., Altenheiner, S., Gisen, A., Hötting, M., Hohm, V., Kröninger, K., Lönker, J., Muschak, M., Raytarowski, A.-K., Weingarten, J., Wizemann, F.
Format: Article
Language:English
Subjects:
Design
Design modifications
Design standards
Field strength
Fluence
Implantation
Irradiation
Laboratories
Neutrons
Pixels
Protons
Sensors
Silicon
Synchrotrons
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Summary:In Dortmund, planar silicon pixel sensors were designed with modified n+-implantations and produced in n+-in-n sensor technology. Baseline for these new designs was the layout of the IBL planar silicon pixel sensor with a 250μm×50μm pitch. The different implantation shapes are intended to cause electrical field strength maxima to increase charge collection after irradiation and thus increase particle detection efficiency. To test and compare the different pixel designs, the modified pixel designs and the standard IBL design are placed on one sensor which can be read out by a FE-I4. After irradiation with protons and neutrons respectively the performance of several sensors is tested in laboratory and test beam measurements. The presented laboratory results verify that all sensors are fully functional after irradiation. The the test beam measurements show different results for sensors irradiated to the same fluence with neutrons in Sandia compared to sensors irradiated with neutrons in Ljubljana or with protons at CERN PS.
ISSN:1748-0221
1748-0221
DOI:10.1088/1748-0221/13/11/C11004