Low-temperature formation of platinum silicides on polycrystalline silicon

Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phas...

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Bibliographic Details
Published in:arXiv.org 2020-02
Main Authors: Chizh, Kirill V, Dubkov, Vladimir P, Senkov, Vyacheslav M, Pirshin, Igor V, Arapkina, Larisa V, Mironov, Sergey A, Orekhov, Andrey S, Yuryev, Vladimir A
Format: Article
Language:English
Subjects:
Electrons
Heat treatment
Intermetallic compounds
Low temperature
Magnetron sputtering
Phase transitions
Photoelectrons
Platinum
Polycrystals
Room temperature
Silicides
Silicon
Temperature
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Summary:Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt\(_3\)Si and Pt\(_2\)Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt\(_3\)Si into Pt\(_2\)Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300\(^{\circ}\)C. The Pt\(_3\)Si and Pt\(_2\)Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480\(^{\circ}\)C for the same time period.
ISSN:2331-8422
DOI:10.48550/arxiv.2002.11189