Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs

This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-...

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Published in:IEEE electron device letters 2020-03, Vol.41 (3), p.317-320
Main Authors: de Oliveira, Alberto V., Veloso, Anabela, Claeys, Cor, Horiguchi, Naoto, Simoen, Eddy
Format: Article
Language:English
Subjects:
Carrier number fluctuations
Flicker
flicker noise
Frequency analysis
Gallium arsenide
gate–all–around
input–referred voltage power spectral density
Logic gates
low–frequency–noise
MOSFET
MOSFETs
Nanosheets
Nanowires
n–channel
oxide trap density
Power spectral density
Scattering
Silicon
silicon device
Variation
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cited_by cdi_FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063
cites cdi_FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063
container_end_page 320
container_issue 3
container_start_page 317
container_title IEEE electron device letters
container_volume 41
creator de Oliveira, Alberto V.
Veloso, Anabela
Claeys, Cor
Horiguchi, Naoto
Simoen, Eddy
description This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.
doi_str_mv 10.1109/LED.2020.2968093
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2368126261</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8963943</ieee_id><sourcerecordid>2368126261</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFbvgpcFz6mzH9nNHiW2KoR6qHpdNsmEpsak7qZI_71bWjwNDM878_IQcstgxhiYh2L-NOPAYcaNysCIMzJhaZolkCpxTiagJUsEA3VJrkLYADAptZyQeTH8JguPPzvsqz1dDm1A2vb0E_3YVq7r9nQ1uuoLa7pqaZ_ka9f32NGl64ewRhzpYv4erslF47qAN6c5JR9xnb8kxdvza_5YJBU3bEwapSvunCvLLFUaalM16KQ2RgohgKe1lqIpmS5TUddcScm5UOAcoEbGQYkpuT_e3fohNg6j3Qw738eXNpIZ44orFik4UpUfQvDY2K1vv53fWwb2IMtGWfYgy55kxcjdMdIi4j-eGSUO3f4AuW1jJg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2368126261</pqid></control><display><type>article</type><title>Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs</title><source>IEEE Xplore (Online service)</source><creator>de Oliveira, Alberto V. ; Veloso, Anabela ; Claeys, Cor ; Horiguchi, Naoto ; Simoen, Eddy</creator><creatorcontrib>de Oliveira, Alberto V. ; Veloso, Anabela ; Claeys, Cor ; Horiguchi, Naoto ; Simoen, Eddy</creatorcontrib><description>This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2020.2968093</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Carrier number fluctuations ; Flicker ; flicker noise ; Frequency analysis ; Gallium arsenide ; gate–all–around ; input–referred voltage power spectral density ; Logic gates ; low–frequency–noise ; MOSFET ; MOSFETs ; Nanosheets ; Nanowires ; n–channel ; oxide trap density ; Power spectral density ; Scattering ; Silicon ; silicon device ; Variation</subject><ispartof>IEEE electron device letters, 2020-03, Vol.41 (3), p.317-320</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063</citedby><cites>FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063</cites><orcidid>0000-0001-7546-0261 ; 0000-0002-9289-5897 ; 0000-0002-6634-4709 ; 0000-0002-5218-4046</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8963943$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,27911,27912,54783</link.rule.ids></links><search><creatorcontrib>de Oliveira, Alberto V.</creatorcontrib><creatorcontrib>Veloso, Anabela</creatorcontrib><creatorcontrib>Claeys, Cor</creatorcontrib><creatorcontrib>Horiguchi, Naoto</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><title>Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.</description><subject>Carrier number fluctuations</subject><subject>Flicker</subject><subject>flicker noise</subject><subject>Frequency analysis</subject><subject>Gallium arsenide</subject><subject>gate–all–around</subject><subject>input–referred voltage power spectral density</subject><subject>Logic gates</subject><subject>low–frequency–noise</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Nanosheets</subject><subject>Nanowires</subject><subject>n–channel</subject><subject>oxide trap density</subject><subject>Power spectral density</subject><subject>Scattering</subject><subject>Silicon</subject><subject>silicon device</subject><subject>Variation</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFbvgpcFz6mzH9nNHiW2KoR6qHpdNsmEpsak7qZI_71bWjwNDM878_IQcstgxhiYh2L-NOPAYcaNysCIMzJhaZolkCpxTiagJUsEA3VJrkLYADAptZyQeTH8JguPPzvsqz1dDm1A2vb0E_3YVq7r9nQ1uuoLa7pqaZ_ka9f32NGl64ewRhzpYv4erslF47qAN6c5JR9xnb8kxdvza_5YJBU3bEwapSvunCvLLFUaalM16KQ2RgohgKe1lqIpmS5TUddcScm5UOAcoEbGQYkpuT_e3fohNg6j3Qw738eXNpIZ44orFik4UpUfQvDY2K1vv53fWwb2IMtGWfYgy55kxcjdMdIi4j-eGSUO3f4AuW1jJg</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>de Oliveira, Alberto V.</creator><creator>Veloso, Anabela</creator><creator>Claeys, Cor</creator><creator>Horiguchi, Naoto</creator><creator>Simoen, Eddy</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7546-0261</orcidid><orcidid>https://orcid.org/0000-0002-9289-5897</orcidid><orcidid>https://orcid.org/0000-0002-6634-4709</orcidid><orcidid>https://orcid.org/0000-0002-5218-4046</orcidid></search><sort><creationdate>20200301</creationdate><title>Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs</title><author>de Oliveira, Alberto V. ; Veloso, Anabela ; Claeys, Cor ; Horiguchi, Naoto ; Simoen, Eddy</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier number fluctuations</topic><topic>Flicker</topic><topic>flicker noise</topic><topic>Frequency analysis</topic><topic>Gallium arsenide</topic><topic>gate–all–around</topic><topic>input–referred voltage power spectral density</topic><topic>Logic gates</topic><topic>low–frequency–noise</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Nanosheets</topic><topic>Nanowires</topic><topic>n–channel</topic><topic>oxide trap density</topic><topic>Power spectral density</topic><topic>Scattering</topic><topic>Silicon</topic><topic>silicon device</topic><topic>Variation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Oliveira, Alberto V.</creatorcontrib><creatorcontrib>Veloso, Anabela</creatorcontrib><creatorcontrib>Claeys, Cor</creatorcontrib><creatorcontrib>Horiguchi, Naoto</creatorcontrib><creatorcontrib>Simoen, Eddy</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>de Oliveira, Alberto V.</au><au>Veloso, Anabela</au><au>Claeys, Cor</au><au>Horiguchi, Naoto</au><au>Simoen, Eddy</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2020-03-01</date><risdate>2020</risdate><volume>41</volume><issue>3</issue><spage>317</spage><epage>320</epage><pages>317-320</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This manuscript presents a systematic low-frequency noise analysis of inversion-mode vertically stacked silicon n-channel nanosheet MOSFETs on bulk wafers. Flicker noise due to carrier number fluctuations is shown as the dominant noise source, which is in line with previous reported studies on gate-all-around (GAA) nanowire nMOSFETs. In addition, the benchmark points out that the vertical stacking approach does not deteriorate the oxide trap density, since its normalized input-referred voltage noise Power Spectral Density at flat-band is lower compared to the data on non-stacked horizontal nanowire nMOSFETs. Another finding is that the Coulomb scattering mechanism dominates the mobility.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.2968093</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-7546-0261</orcidid><orcidid>https://orcid.org/0000-0002-9289-5897</orcidid><orcidid>https://orcid.org/0000-0002-6634-4709</orcidid><orcidid>https://orcid.org/0000-0002-5218-4046</orcidid></addata></record>
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subjects Carrier number fluctuations
Flicker
flicker noise
Frequency analysis
Gallium arsenide
gate–all–around
input–referred voltage power spectral density
Logic gates
low–frequency–noise
MOSFET
MOSFETs
Nanosheets
Nanowires
n–channel
oxide trap density
Power spectral density
Scattering
Silicon
silicon device
Variation
title Low-Frequency Noise in Vertically Stacked Si n-Channel Nanosheet FETs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T04%3A42%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-Frequency%20Noise%20in%20Vertically%20Stacked%20Si%20n-Channel%20Nanosheet%20FETs&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=de%20Oliveira,%20Alberto%20V.&rft.date=2020-03-01&rft.volume=41&rft.issue=3&rft.spage=317&rft.epage=320&rft.pages=317-320&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2020.2968093&rft_dat=%3Cproquest_cross%3E2368126261%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c291t-f67c2aaabb85670d9cfea47994333025d743fb17b53dd264422360aa0e7e12063%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2368126261&rft_id=info:pmid/&rft_ieee_id=8963943&rfr_iscdi=true