Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering

The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-02, Vol.54 (2), p.201-204
Main Authors: Castro-Arata, R. A., Stozharov, V. M., Dolginsev, D. M., Kononov, A. A., Saito, Y., Fons, P., Tominaga, J., Anisimova, N. I., Kolobov, A. V.
Format: Article
Language:English
Subjects:
Amorphous
Antimony
Dielectric relaxation
Electronics industry
Magnetic Materials
Magnetism
Magnetron sputtering
Organic Semiconductors
Physics
Physics and Astronomy
Semiconductors
Tellurium
Thin films
Vitreous
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Description
Summary:The results of studying the structure and processes of dielectric relaxation in thin layers of Ge–Sb–Te are presented. The found permittivity dispersion and occurrence of dielectric-loss maxima in the low-frequency region are explained by the structural features of the compounds under study.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378262002013X