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Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photolumine...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-02, Vol.54 (2), p.228-232
Main Authors: Baglov, A. V., Chubenko, E. B., Hnitsko, A. A., Borisenko, V. E., Malashevich, A. A., Uglov, V. V.
Format: Article
Language:English
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Summary:Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625°C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620020049