Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generati...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020, Vol.54 (1), p.150-156
Main Authors: Edinach, E. V., Krivoruchko, A. D., Gurin, A. S., Muzafarova, M. V., Ilyin, I. V., Babunts, R. A., Romanov, N. G., Badalyan, A. G., Baranov, P. G.
Format: Article
Language:English
Subjects:
Continuous radiation
Cryogenic equipment
Crystallography
Crystals
Electron paramagnetic resonance
Fabrication
Heterostructures
Magnetic fields
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Silicon
Silicon carbide
Spectroscopy
Spectrum analysis
Testing of Materials and Structures
Treatment
Vanadium
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Summary:The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generation EPR spectrometer operating in the continuous wave and pulsed modes at frequencies of 94 and 130 GHz in a wide range of magnetic fields (–7–7 T) and temperatures (1.5–300 K). A magneto-optical closed-cycle cryogenic system (Spectormag PT), highly stable generators (94 and 130 GHz), and a cavity-free system for supplying microwave power to the sample are used.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620010066