Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

Herein, a unique device‐design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III‐nitride high electron mobility transistors (HEMTs) by engineering the gate edge toward the drain. The breakdown of such devices with meandering gate‐drain access re...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2020-03, Vol.217 (5), p.n/a
Main Authors: Kumar, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim
Format: Article
Language:English
Subjects:
2D electron gas
3D technology computer‐aided design
Aluminum gallium nitrides
Baliga figure of merit
Breakdown
Computer simulation
Electric fields
Electric potential
Figure of merit
Gallium nitrides
High electron mobility transistors
Repair & maintenance
Semiconductor devices
Transistors
Voltage
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Summary:Herein, a unique device‐design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III‐nitride high electron mobility transistors (HEMTs) by engineering the gate edge toward the drain. The breakdown of such devices with meandering gate‐drain access region (M‐HEMT) are found to be 62% more compared with that of conventional HEMT whereas the on‐resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. The 3D technology computer‐aided design simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage. The schematic of control device, gate edge‐engineered meandered device (M‐HEMT), zoomed image of gate edge region showing various dimensions, and scanning electron microscopy (SEM) image of fabricated device. AlGaN barrier and the presence of 2DEG is shown in green color. The region in the gray dashed box (one unit) is used for TCAD simulation.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201900766