Negative differential resistance effect in resistive switching devices based on h-LuFeO3/CoFe2O4 heterojunctions

The negative differential resistance (NDR) effect enables multilevel storage and gradual resistance modulation in resistive switching (RS) devices to be achieved. However, the poor reproducibility of NDR is the obstacle that restricts their application because the appearance of the NDR effect in RS...

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Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2020-03, Vol.22 (10), p.5819-5825
Main Authors: Ran, Xinxin, Hou, Pengfei, Song, Jiaxun, Song, Hongjia, Zhong, Xiangli, Wang, Jinbin
Format: Article
Language:English
Subjects:
Cobalt ferrites
Devices
Ferroelectric materials
Ferroelectricity
Heterojunctions
Reproducibility
Room temperature
Switching
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Summary:The negative differential resistance (NDR) effect enables multilevel storage and gradual resistance modulation in resistive switching (RS) devices to be achieved. However, the poor reproducibility of NDR is the obstacle that restricts their application because the appearance of the NDR effect in RS devices is usually accidental or unstable at room temperature. In this report, we demonstrate a polarization and interfacial defect modulated NDR effect in h-LuFeO3/CoFe2O4 heterojunction-based RS devices; especially, the NDR is reproducible after hundreds of cycles at room temperature. This research provides an effective way for realizing the reproducible NDR effect in ferroelectric RS devices, and it may promote the development and application of RS devices with the NDR effect.
ISSN:1463-9076
1463-9084
DOI:10.1039/d0cp00530d