The Nature of Introduced Phase 1/f Noise in Microwave Oscillators

The nature of introduced phase 1/f (flicker) noise in an amplifier of a microwave oscillator that contains an isolating element (directional coupler) is studied. It is shown that noise can be generated due to fluctuations in resistive equivalent parameters of a heterojunction bipolar transistor (HBT...

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Bibliographic Details
Published in:Journal of communications technology & electronics 2020, Vol.65 (1), p.84-89
Main Authors: Yakimov, A. V., Klyuev, A. V., Krevskii, M. A.
Format: Article
Language:English
Subjects:
Amplifiers
Amplifiers (Electronics)
Communications Engineering
Directional couplers
Engineering
Flicker
Heterojunction bipolar transistors
Microwave devices
Microwave oscillators
Networks
Noise
Semiconductor devices
Statistical Radiophysics
Transistors
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Summary:The nature of introduced phase 1/f (flicker) noise in an amplifier of a microwave oscillator that contains an isolating element (directional coupler) is studied. It is shown that noise can be generated due to fluctuations in resistive equivalent parameters of a heterojunction bipolar transistor (HBT) in the amplifier. The spectra of the fluctuations can be estimated using dc measurements. Such an approach allows selection of transistors for fabrication of amplifiers with low introduced 1/f noise and, hence, oscillators with low flicker fluctuations in the frequency.
ISSN:1064-2269
1555-6557
DOI:10.1134/S1064226920010076