Coupled transport of phonons and carriers in semiconductors: A case study of n -doped GaAs

We present a general coupled electron-phonon Boltzmann transport equations (BTEs) scheme designed to capture the mutual drag of the two interacting systems. By combining density functional theory based first-principles calculations of anharmonic phonon-phonon interactions with physical models of ele...

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Bibliographic Details
Published in:Physical review. B 2020-02, Vol.101 (7), Article 075202
Main Authors: Protik, Nakib H., Broido, David A.
Format: Article
Language:English
Subjects:
Anharmonicity
Boltzmann transport equation
Charge transport
Density functional theory
Electron phonon interactions
Electrons
First principles
Gallium arsenide
Low temperature
Phonons
Seebeck effect
Semiconductors
Thermal conductivity
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Summary:We present a general coupled electron-phonon Boltzmann transport equations (BTEs) scheme designed to capture the mutual drag of the two interacting systems. By combining density functional theory based first-principles calculations of anharmonic phonon-phonon interactions with physical models of electron-phonon interactions, we apply our implementation of the coupled BTEs to calculate the thermal conductivity, mobility, Seebeck and Peltier coefficients of n-doped gallium arsenide. The measured low-temperature enhancement in the Seebeck coefficient is captured using the solution of the fully coupled electron-phonon BTEs, while the uncoupled electron BTE fails to do so. This work gives insights into the fundamental nature of charge and heat transport in semiconductors and advances predictive ab initio computational approaches. We discuss possible extensions of our work.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.101.075202