Semiconductor–Metal Transition in Magnetic Semiconductor Compounds at High Pressure

The magnetic, transport, and magnetotransport properties of ferromagnetic Zn 0.1 Cd 0.9 GeAs 2 + 10% MnAs and Zn 0.1 Cd 0.9 GeAs 2 + 15% MnAs nanocomposites with a Curie temperature T C ≈ 310–312 K are studied at a high pressure up to 7 GPa and room temperature. The behavior of the magnetic and elec...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2020, Vol.130 (1), p.94-100
Main Authors: Arslanov, R. K., Arslanov, T. R., Fedorchenko, I. V., Zheludkevich, A. L.
Format: Article
Language:English
Subjects:
Analysis
Classical and Quantum Gravitation
Composition
Curie temperature
Disorder
Elementary Particles
Ferromagnetism
Giant magnetoresistance
Magnetic fields
Magnetic moments
Magnetic properties
Magnetic semiconductors
Magnetism
Magnetoresistance
Magnetoresistivity
Nanocomposites
Order
Particle and Nuclear Physics
Phase Transition in Condensed System
Phase transitions
Physics
Physics and Astronomy
Quantum Field Theory
Relativity Theory
Room temperature
Semiconductors
Solid State Physics
Transport properties
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Summary:The magnetic, transport, and magnetotransport properties of ferromagnetic Zn 0.1 Cd 0.9 GeAs 2 + 10% MnAs and Zn 0.1 Cd 0.9 GeAs 2 + 15% MnAs nanocomposites with a Curie temperature T C ≈ 310–312 K are studied at a high pressure up to 7 GPa and room temperature. The behavior of the magnetic and electronic properties under pressure points to a magnetic transformation and a semiconductor–metal transition, which occur at the same pressure ( P ≈ 3.5 GPa). Both compositions exhibit pressure-induced magnetoresistance in the magnetic field range up to H = 5 kOe. As follows from an analysis of the experimental data, the magnetoresistance in the semiconductor–metal transition area is described by a standard p – d model, which takes into account the interaction of carrier spins and the magnetic moment localized at Mn impurities. A giant magnetoresistance is detected in this region: it is maximal in comparison with the magnetoresistance at atmospheric pressure (Δρ xx /ρ 0 < 1%) for the composition with 15% MnAs clusters. The appearance of enhanced magnetoresistance and the magnetic and electronic phase transformations are mainly caused by pressure-induced changes in the matrix.
ISSN:1063-7761
1090-6509
DOI:10.1134/S106377611912001X