Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

• Published in: Applied solar energy 2019-09, Vol.55 (5), p.291-308
• Main Authors: Zainabidinov, S. Z., Saidov, A. S., Kalanov, M. U., Boboev, A. Y.
• Format: Article
• Language: English
• Subjects: Crystallography; Electrical Machines and Networks; Engineering; Epitaxial growth; Gallium arsenide; Heterostructures; Liquid phase epitaxy; Liquid phases; Maxima; Parameters; Photons; Photosensitivity; Physical properties; Power Electronics; Recombination; Room temperature; Selenide; Single crystals; Solar energy; Solar-Energy Materials Science; Solid solutions; Sphalerite; Substitutional solid solutions; Surface layers; Zinc selenide; Zincblende
• ISSN: 0003-701X; 1934-9424
• DOI: 10.3103/S0003701X1905013X

A review of experimental and theoretical studies on technology for producing the single-crystal substitutional solid solution of p- (GaAs) 1 –  x  –  y (Ge 2 ) x (ZnSe) y on (GaAs) with the given crystallographic orientation using the liquid-phase epitaxy method is presented in this paper. The methods for determining the optimal parameters of the grown epitaxial films are given. Based on the analysis of literature data and the experimental results of the authors, the optimal parameters of epitaxial films are established. The solid solutions (GaAs) 0.69 (Ge 2 ) 0.17 (ZnSe) 0.14 have a sphalerite structure and possible configurations of the arrangement of atoms and molecules are determined. It has been established that paired Ge atoms partially replace GaAs molecules in the defective regions of the matrix lattice, and zinc selenide molecules form nanoislands on the surface layer of the GaAs 1 –  x Ge x solid solution, which have the geometric shape dome , with lateral dimensions of 55–65 nm. Research investigating current transfer mechanisms in n -GaAs– p- (GaAs) 1 –  x  –  y (Ge 2 ) x (ZnSe) y hetero-structures at room temperature show that in the voltage range from 0.7 to 3 V degree depends J = АV α (α 1 = 2, α 2 = 2.7 and α 3 = 3) are observed, which arise due to the formation of complex recombination complexes. The noticeable photosensitivity of n -GaAs– p- (GaAs) 0.69 (Ge 2 ) 0.17 (ZnSe) 0.14 hetero-structure begins at the photon energy of 1.16 eV, and the maximum is observed at the photon energy of 1.38 eV. In the short-wave region of the emission spectrum, peaks are observed with maxima at photon energies of 1.37, 1.47, 1.65, 1.88, 2.3, and 2.62 eV, as well as the gentle portion at 2.26–2.46 eV. Analysis using the Gaussian approximation showed that these features of the photo-spectrum are related to the state of the atoms of the constituent components and their interaction when illuminated by sunlight. It has been established that heterostructures have the property of controlled selective photosensitivity.