Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor

We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabr...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-04, Vol.59 (SG), p.SGGD08
Main Authors: Takeuchi, Wakana, Kutsuki, Katsuhiro, Kagoshima, Eiji, Onishi, Toru, Iwasaki, Shinya, Sakashita, Mitsuo, Fujiwara, Hirokazu, Nakatsuka, Osamu
Format: Article
Language:English
Subjects:
Compressive properties
Field effect transistors
MOSFETs
Semiconductor devices
Strain
Temperature dependence
Transistors
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Summary:We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions [1120] and [1100] was investigated on the bend directions [1120] and [1100] with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced stress.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab6d85