Thermoelectric (Ba x Sr1–x )Si2 films prepared by sputtering method over the barium solubility limit

In this work, (Ba x Sr1–x )Si2 thin films were prepared by the co-sputtering method at various deposition temperatures. The constituent phase of the films primarily depended on the deposition temperature and the composition x. The composition to make a solid solution was expanded by lowering the dep...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-04, Vol.59, p.1
Main Authors: Aoyama, Kodai, Shimizu, Takao, Kuramochi, Hideto, Mesuda, Masami, Akiike, Ryo, Ide, Keisuke, Katase, Takayoshi, Kamiya, Toshio, Kimura, Yoshisato, Funakubo, Hiroshi
Format: Article
Language:English
Subjects:
Barium
Composition
Deposition
Maximum power
Metastable phases
Power factor
Room temperature
Solid solutions
Sputtering
Temperature
Thermoelectricity
Thin films
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Summary:In this work, (Ba x Sr1–x )Si2 thin films were prepared by the co-sputtering method at various deposition temperatures. The constituent phase of the films primarily depended on the deposition temperature and the composition x. The composition to make a solid solution was expanded by lowering the deposition temperature, compared to that of bulk-sintered bodies. Further lowering the deposition temperature produced a metastable phase, which was a layered structure (trigonal, EuGe2-type structure), with a low thermoelectric power factor. Substitution with Ba led to an increase in the temperature showing the highest power factor. The samples with Ba concentrations over 17% showed the maximum power factor around room temperature.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab645b