Flexible One-Dimensional Metal-Insulator-Graphene Diode

In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current...

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Bibliographic Details
Published in:arXiv.org 2020-03
Main Authors: Wang, Zhenxing, Burkay Uzlu, Shaygan, Mehrdad, Otto, Martin, Ribeiro, Mário, Enrique González Marín, Iannaccone, Giuseppe, Fiori, Gianluca, Mohamed Saeed Elsayed, Negra, Renato, Neumaier, Daniel
Format: Article
Language:English
Subjects:
Aluminum oxide
Bend radius
Diodes
Frequency response
Graphene
Insulators
Substrates
Titanium dioxide
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Summary:In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
ISSN:2331-8422
DOI:10.48550/arxiv.2003.08251