Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated...

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Bibliographic Details
Published in:Physics of atomic nuclei 2019-12, Vol.82 (11), p.1571-1575
Main Authors: Ramakoti, R. Sh, Anan’in, O. B., Melekhov, A. P., Gerasimov, I. A., Bogdanov, G. S., Sredin, V. G., Novikov, I. K., Frolova, I. V., Dzhumaev, P. S.
Format: Article
Language:English
Subjects:
Atomic properties
Concentrators
Epitaxy
Interaction of Plasmas
Laser plasmas
Laser-plasma interactions
Mercury cadmium tellurides
Particle and Nuclear Physics
Particle Beams
Photoionization
Physics
Physics and Astronomy
Plasma physics
Radiation with Matter
Semiconductors
Soft x rays
Solid solutions
Surface defects
Surface layers
X-rays
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Summary:The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.
ISSN:1063-7788
1562-692X
DOI:10.1134/S1063778819110188