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Triarylboron-based TADF emitters with perfluoro substituents: high-efficiency OLEDs with a power efficiency over 100 lm W −1
We report boron-based thermally activated delayed fluorescence (TADF) emitters that can lead to high-efficiency organic light-emitting diodes (OLEDs) with high power efficiency and low driving voltage. ortho -Carbazole-appended triarylboron compounds ( 2–7 ), in which perfluoroalkyl (CF 3 and C 3 F...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (12), p.4253-4263 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report boron-based thermally activated delayed fluorescence (TADF) emitters that can lead to high-efficiency organic light-emitting diodes (OLEDs) with high power efficiency and low driving voltage.
ortho
-Carbazole-appended triarylboron compounds (
2–7
), in which perfluoroalkyl (CF
3
and C
3
F
7
) or perfluoroaryl (4-CF
3
C
6
F
4
) groups are attached as secondary acceptors, are prepared and characterized. The compounds exhibit a light greenish to yellow emission in toluene with high photoluminescence quantum yields up to 100%. The twisted donor (D)–acceptor (A) structure, as evidenced by both the X-ray crystal structures and theoretically optimized structures, leads to a small energy splitting (Δ
E
ST
< 0.1 eV) between the excited singlet and triplet states, giving rise to strong TADF. High-efficiency TADF-OLEDs are realized with the CF
3
- and 4-CF
3
C
6
F
4
-substituted compounds as emitters. The optimized OLEDs based on the CF
3
-substituted emitter (
5
) show a high external quantum efficiency of 29.9% with a low turn-on voltage of 2.35 V. In particular, the devices achieve an ultrahigh power efficiency (PE) of 123.9 lm W
−1
without any light-outcoupling enhancement, which is among the best PE values for the reported TADF-OLEDs. The devices also maintain a high PE at the practical brightness, such as 100 cd m
−2
(118.7 lm W
−1
) and 1000 cd m
−2
(82.3 lm W
−1
). |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/C9TC06204A |