The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiat...

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Bibliographic Details
Published in:Physics of atomic nuclei 2019-12, Vol.82 (12), p.1682-1685
Main Authors: Hrubčín, L., Gurov, Yu. B., Zat’ko, B., Boháček, P., Rozov, S. V., Rozova, I. E., Sandukovsky, V. G., Skuratov, V. A.
Format: Article
Language:English
Subjects:
Analysis
Detectors
Engineering Design of Nuclear Physics Equipment
Epitaxial layers
Epitaxy
Nuclear radiation
Particle and Nuclear Physics
Physics
Physics and Astronomy
Pulse amplitude
Sensors
Silicon carbide
Spectrometry
Xenon
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Summary:The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height defect was measured in SiC detectors under irradiation by accelerated xenon ions with different energies. It is shown that this parameter in the spectroscopic analysis of Xe ions is ∼45% of the true energy of the particles in question.
ISSN:1063-7788
1562-692X
DOI:10.1134/S1063778819120111