High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition

The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10 1) layers are formed in the AlN film with long preflow times. It is shown that the AlN nucl...

Full description

Saved in:
Bibliographic Details
Published in:Crystallography reports 2020, Vol.65 (1), p.122-125
Main Authors: Ezubchenko, I. S., Chernykh, M. Ya, Mayboroda, I. O., Trun’kin, I. N., Chernykh, I. A., Zanaveskin, M. L.
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Crystallography and Scattering Methods
Metalorganic chemical vapor deposition
Nucleation
Optimization
Physics
Physics and Astronomy
Silicon substrates
Surface and Thin Films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of trimethylaluminum preflow time on the crystalline quality of AlN films grown by metalorganic chemical vapor deposition on Si(111) substrates has been investigated. It is found that semipolar (10 1) layers are formed in the AlN film with long preflow times. It is shown that the AlN nucleation can be controlled by choosing an optimal preflow time, which provides a desired film quality. At the optimum preflow time, the FWHM of the rocking curve for the 0002 reflection amounts to 0.59°.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774520010071