Effect of Mg on Cd0.9−xZn0.1S nanoparticles for optoelectronic applications

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2020-04, Vol.126 (4), Article 315
• Main Authors: Devadoss, I., Sakthivel, P.
• Format: Article
• Language: English
• Subjects: Applied physics; Characterization and Evaluation of Materials; Chemical synthesis; Condensed Matter Physics; Crystal defects; Crystal structure; Doping; Emission; Energy gap; Lattice vacancies; Machines; Magnesium; Manufacturing; Materials science; Nanoparticles; Nanotechnology; Optical and Electronic Materials; Optical properties; Optoelectronic devices; Physics; Physics and Astronomy; Processes; Size effects; Surface defects; Surfaces and Interfaces; Thin Films; X-ray diffraction; Zinc
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-020-03490-w

Cd 0.9− x Zn 0.1 Mg x S ( x  = 0, 0.02, 0.04 and 0.06) nanoparticles were synthesized through chemical route. All the specimens had cubic structure, and it was proved from XRD results that the incorporation of Mg did not alter the cubic structure of Zn:CdS crystal structure. Doping was achieved without forming any secondary phase in the Zn:CdS host lattice. TEM results supported the XRD results for structural and phase confirmation. SEM photographs showed a smoothened picture while Mg doping. EDX and FTIR results confirmed the elemental composition and the presence of targeted elements, respectively. UV–visible absorption and transmittance studies showed that Mg addition produced a blue shift in wavelength and slight reduction in intensity received. The band gap value of Zn- and Mg-doped CdS nanoparticles was extended to the highest value from 3.8 to 4.12 eV. This increment of band gap value was noticed for every concentration of Mg, and it was presented based on the size effect. PL emission peaks were received at 374 nm, 411 nm, 453 nm, 491 nm and 523 nm due to Mg incorporation. These emission peaks were discussed in terms of surface defects and sulphur vacancies. Since these materials possessed excellent optical properties, they can be selected for optoelectronic device applications.