Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film

• Published in: Journal of electronic materials 2020-05, Vol.49 (5), p.2698-2703
• Main Authors: Baranwal, Ajay Kumar, Saini, Shrikant, Wang, Zhen, Hamada, Kengo, Hirotani, Daisuke, Nishimura, Kohei, Kamarudin, Muhammad Akmal, Kapil, Gaurav, Yabuki, Tomohide, Iikubo, Satoshi, Shen, Qing, Miyazaki, Koji, Hayase, Shuzi
• Format: Article
• Language: English
• Subjects: Aging; Aging (metallurgy); Carrier density; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electrical resistivity; Electronic properties; Electronics and Microelectronics; Instrumentation; International Conference on Thermoelectrics 2019; Materials Science; Optical and Electronic Materials; Perovskites; Photoelectrons; Power factor; Precursors; Room temperature; Seebeck effect; Solid State Physics; Thermoelectric materials; Thin films; Topical Collection: International Conference on Thermoelectrics 2019
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-019-07846-8

Inorganic CsSnI 3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI 3 thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn 4+ increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn 4+ concentrations, we report a power factor of 145.10 μW m −1  K −2 , along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.