Loading…
Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film
Inorganic CsSnI 3 based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI 3 thin film from the viewpoint of carrier concentration optimizations. It was found that...
Saved in:
| Published in: | Journal of electronic materials 2020-05, Vol.49 (5), p.2698-2703 |
|---|---|
| Main Authors: | , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3 |
| container_end_page | 2703 |
| container_issue | 5 |
| container_start_page | 2698 |
| container_title | Journal of electronic materials |
| container_volume | 49 |
| creator | Baranwal, Ajay Kumar Saini, Shrikant Wang, Zhen Hamada, Kengo Hirotani, Daisuke Nishimura, Kohei Kamarudin, Muhammad Akmal Kapil, Gaurav Yabuki, Tomohide Iikubo, Satoshi Shen, Qing Miyazaki, Koji Hayase, Shuzi |
| description | Inorganic CsSnI
3
based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI
3
thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn
4+
increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn
4+
concentrations, we report a power factor of 145.10 μW m
−1
K
−2
, along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature. |
| doi_str_mv | 10.1007/s11664-019-07846-8 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2385583169</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2385583169</sourcerecordid><originalsourceid>FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQQIMoWKt_wNOC52gm33sspdVCwUIr9Ba22aTd0t3UZPfgv3frCt48zRzem4GH0COQZyBEvSQAKTkmkGOiNJdYX6ERCM4waLm9RiPCJGBBmbhFdykdCQEBGkZoO_Pe2TYLPltFZ7uYQszW4dS1VWiyyb5q9lm_tAeXbQ4u1sGdejxWNlu56EOsi8a6iz1N62bBeqhqsnl1qu_RjS9OyT38zjH6mM820ze8fH9dTCdLbDnNW8wUiKIgvhBlkTtCdrykQPkOlLZceq92JVeWasVIrvISrKTgPSlFySQtqWdj9DTcPcfw2bnUmmPoYtO_NJRpITQDmfcUHSgbQ0rReXOOVV3ELwPEXAqaoaDpC5qfgkb3Ehuk1MPN3sW_0_9Y32nNcxY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2385583169</pqid></control><display><type>article</type><title>Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film</title><source>Springer Nature</source><creator>Baranwal, Ajay Kumar ; Saini, Shrikant ; Wang, Zhen ; Hamada, Kengo ; Hirotani, Daisuke ; Nishimura, Kohei ; Kamarudin, Muhammad Akmal ; Kapil, Gaurav ; Yabuki, Tomohide ; Iikubo, Satoshi ; Shen, Qing ; Miyazaki, Koji ; Hayase, Shuzi</creator><creatorcontrib>Baranwal, Ajay Kumar ; Saini, Shrikant ; Wang, Zhen ; Hamada, Kengo ; Hirotani, Daisuke ; Nishimura, Kohei ; Kamarudin, Muhammad Akmal ; Kapil, Gaurav ; Yabuki, Tomohide ; Iikubo, Satoshi ; Shen, Qing ; Miyazaki, Koji ; Hayase, Shuzi</creatorcontrib><description>Inorganic CsSnI
3
based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI
3
thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn
4+
increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn
4+
concentrations, we report a power factor of 145.10 μW m
−1
K
−2
, along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-019-07846-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Aging ; Aging (metallurgy) ; Carrier density ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electrical resistivity ; Electronic properties ; Electronics and Microelectronics ; Instrumentation ; International Conference on Thermoelectrics 2019 ; Materials Science ; Optical and Electronic Materials ; Perovskites ; Photoelectrons ; Power factor ; Precursors ; Room temperature ; Seebeck effect ; Solid State Physics ; Thermoelectric materials ; Thin films ; Topical Collection: International Conference on Thermoelectrics 2019</subject><ispartof>Journal of electronic materials, 2020-05, Vol.49 (5), p.2698-2703</ispartof><rights>The Minerals, Metals & Materials Society 2019</rights><rights>The Minerals, Metals & Materials Society 2019.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3</citedby><cites>FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3</cites><orcidid>0000-0003-4582-4532</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Baranwal, Ajay Kumar</creatorcontrib><creatorcontrib>Saini, Shrikant</creatorcontrib><creatorcontrib>Wang, Zhen</creatorcontrib><creatorcontrib>Hamada, Kengo</creatorcontrib><creatorcontrib>Hirotani, Daisuke</creatorcontrib><creatorcontrib>Nishimura, Kohei</creatorcontrib><creatorcontrib>Kamarudin, Muhammad Akmal</creatorcontrib><creatorcontrib>Kapil, Gaurav</creatorcontrib><creatorcontrib>Yabuki, Tomohide</creatorcontrib><creatorcontrib>Iikubo, Satoshi</creatorcontrib><creatorcontrib>Shen, Qing</creatorcontrib><creatorcontrib>Miyazaki, Koji</creatorcontrib><creatorcontrib>Hayase, Shuzi</creatorcontrib><title>Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>Inorganic CsSnI
3
based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI
3
thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn
4+
increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn
4+
concentrations, we report a power factor of 145.10 μW m
−1
K
−2
, along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.</description><subject>Aging</subject><subject>Aging (metallurgy)</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electrical resistivity</subject><subject>Electronic properties</subject><subject>Electronics and Microelectronics</subject><subject>Instrumentation</subject><subject>International Conference on Thermoelectrics 2019</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Perovskites</subject><subject>Photoelectrons</subject><subject>Power factor</subject><subject>Precursors</subject><subject>Room temperature</subject><subject>Seebeck effect</subject><subject>Solid State Physics</subject><subject>Thermoelectric materials</subject><subject>Thin films</subject><subject>Topical Collection: International Conference on Thermoelectrics 2019</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQQIMoWKt_wNOC52gm33sspdVCwUIr9Ba22aTd0t3UZPfgv3frCt48zRzem4GH0COQZyBEvSQAKTkmkGOiNJdYX6ERCM4waLm9RiPCJGBBmbhFdykdCQEBGkZoO_Pe2TYLPltFZ7uYQszW4dS1VWiyyb5q9lm_tAeXbQ4u1sGdejxWNlu56EOsi8a6iz1N62bBeqhqsnl1qu_RjS9OyT38zjH6mM820ze8fH9dTCdLbDnNW8wUiKIgvhBlkTtCdrykQPkOlLZceq92JVeWasVIrvISrKTgPSlFySQtqWdj9DTcPcfw2bnUmmPoYtO_NJRpITQDmfcUHSgbQ0rReXOOVV3ELwPEXAqaoaDpC5qfgkb3Ehuk1MPN3sW_0_9Y32nNcxY</recordid><startdate>20200501</startdate><enddate>20200501</enddate><creator>Baranwal, Ajay Kumar</creator><creator>Saini, Shrikant</creator><creator>Wang, Zhen</creator><creator>Hamada, Kengo</creator><creator>Hirotani, Daisuke</creator><creator>Nishimura, Kohei</creator><creator>Kamarudin, Muhammad Akmal</creator><creator>Kapil, Gaurav</creator><creator>Yabuki, Tomohide</creator><creator>Iikubo, Satoshi</creator><creator>Shen, Qing</creator><creator>Miyazaki, Koji</creator><creator>Hayase, Shuzi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0003-4582-4532</orcidid></search><sort><creationdate>20200501</creationdate><title>Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film</title><author>Baranwal, Ajay Kumar ; Saini, Shrikant ; Wang, Zhen ; Hamada, Kengo ; Hirotani, Daisuke ; Nishimura, Kohei ; Kamarudin, Muhammad Akmal ; Kapil, Gaurav ; Yabuki, Tomohide ; Iikubo, Satoshi ; Shen, Qing ; Miyazaki, Koji ; Hayase, Shuzi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aging</topic><topic>Aging (metallurgy)</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electrical resistivity</topic><topic>Electronic properties</topic><topic>Electronics and Microelectronics</topic><topic>Instrumentation</topic><topic>International Conference on Thermoelectrics 2019</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Perovskites</topic><topic>Photoelectrons</topic><topic>Power factor</topic><topic>Precursors</topic><topic>Room temperature</topic><topic>Seebeck effect</topic><topic>Solid State Physics</topic><topic>Thermoelectric materials</topic><topic>Thin films</topic><topic>Topical Collection: International Conference on Thermoelectrics 2019</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baranwal, Ajay Kumar</creatorcontrib><creatorcontrib>Saini, Shrikant</creatorcontrib><creatorcontrib>Wang, Zhen</creatorcontrib><creatorcontrib>Hamada, Kengo</creatorcontrib><creatorcontrib>Hirotani, Daisuke</creatorcontrib><creatorcontrib>Nishimura, Kohei</creatorcontrib><creatorcontrib>Kamarudin, Muhammad Akmal</creatorcontrib><creatorcontrib>Kapil, Gaurav</creatorcontrib><creatorcontrib>Yabuki, Tomohide</creatorcontrib><creatorcontrib>Iikubo, Satoshi</creatorcontrib><creatorcontrib>Shen, Qing</creatorcontrib><creatorcontrib>Miyazaki, Koji</creatorcontrib><creatorcontrib>Hayase, Shuzi</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>ProQuest research library</collection><collection>ProQuest Science Journals</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baranwal, Ajay Kumar</au><au>Saini, Shrikant</au><au>Wang, Zhen</au><au>Hamada, Kengo</au><au>Hirotani, Daisuke</au><au>Nishimura, Kohei</au><au>Kamarudin, Muhammad Akmal</au><au>Kapil, Gaurav</au><au>Yabuki, Tomohide</au><au>Iikubo, Satoshi</au><au>Shen, Qing</au><au>Miyazaki, Koji</au><au>Hayase, Shuzi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2020-05-01</date><risdate>2020</risdate><volume>49</volume><issue>5</issue><spage>2698</spage><epage>2703</epage><pages>2698-2703</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>Inorganic CsSnI
3
based perovskite crystals are interesting thermoelectric materials, owing to their unusual electronic properties. Here we report the thermoelectric power performance of a solution-coated CsSnI
3
thin film from the viewpoint of carrier concentration optimizations. It was found that the carrier concentration can be changed by altering the aging time of the precursor solution. X-ray photoelectron spectroscopy analysis showed that the concentration of metallic Sn
4+
increased as the solution aging time increased. This made possible to explore the relationship between carrier concentration and thermoelectric power factor. After controlling Sn
4+
concentrations, we report a power factor of 145.10 μW m
−1
K
−2
, along with electrical conductivity 106 S/cm and Seebeck coefficient of 117 μV/K, measured at room temperature.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-019-07846-8</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4582-4532</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2020-05, Vol.49 (5), p.2698-2703 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_2385583169 |
| source | Springer Nature |
| subjects | Aging Aging (metallurgy) Carrier density Characterization and Evaluation of Materials Chemistry and Materials Science Electrical resistivity Electronic properties Electronics and Microelectronics Instrumentation International Conference on Thermoelectrics 2019 Materials Science Optical and Electronic Materials Perovskites Photoelectrons Power factor Precursors Room temperature Seebeck effect Solid State Physics Thermoelectric materials Thin films Topical Collection: International Conference on Thermoelectrics 2019 |
| title | Effect of Precursor Solution Aging on the Thermoelectric Performance of CsSnI3 Thin Film |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T12%3A04%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Precursor%20Solution%20Aging%20on%20the%20Thermoelectric%20Performance%20of%20CsSnI3%20Thin%20Film&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Baranwal,%20Ajay%20Kumar&rft.date=2020-05-01&rft.volume=49&rft.issue=5&rft.spage=2698&rft.epage=2703&rft.pages=2698-2703&rft.issn=0361-5235&rft.eissn=1543-186X&rft_id=info:doi/10.1007/s11664-019-07846-8&rft_dat=%3Cproquest_cross%3E2385583169%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c429t-3715aa0fa5da9e00b4d2124b178c46ff7bd47c28730979d1c621ff0d5d362d2f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2385583169&rft_id=info:pmid/&rfr_iscdi=true |