High-Efficiency Multiple Quantum Well Triple-Junction Tandem Solar Cell

This work shows the design of a high-efficiency solar cell in an indium-gallium-arsenide/–gallium-arsenide multiple quantum well (MQW) structure. The main concerns regarding the solar cell are its fabrication complexity, design complexity, and efficiency. Tandem solar cells are designed to absorb th...

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Bibliographic Details
Published in:Journal of electronic materials 2020-05, Vol.49 (5), p.3124-3129
Main Author: Karmakar, S.
Format: Article
Language:English
Subjects:
Arsenides
Characterization and Evaluation of Materials
Chemistry and Materials Science
Comparative studies
Complexity
Efficiency
Electronics and Microelectronics
Embedded structures
Gallium
Graphical user interface
Instrumentation
Intermetallic compounds
Lattice matching
Materials Science
Optical and Electronic Materials
Photovoltaic cells
Quantum wells
Solar cells
Solar energy
Solid State Physics
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Summary:This work shows the design of a high-efficiency solar cell in an indium-gallium-arsenide/–gallium-arsenide multiple quantum well (MQW) structure. The main concerns regarding the solar cell are its fabrication complexity, design complexity, and efficiency. Tandem solar cells are designed to absorb the maximum amount of solar energy. In a tandem structure, different positive-negative junctions are responsible for absorbing different portions of the solar spectrum. Besides this, the embedded MQW structure also helps to increase the efficiency of the solar cell. The maximum efficiency of the tandem solar cell in the different material structures is reported to be around 45%–46%. Proper matching of different material parameters such as the lattice-matched semiconductor and thickness of the tandem solar cell can increase the efficiency of the solar cell. This paper introduces a tandem solar cell having an efficiency of around 50%. This comparative study shows the improved performance of the proposed solar cell. A graphical user interface is also developed for solar cell simulation.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-08060-7