Non-local Chemical Potential Modulation in Topological Insulators Via Electric Field Driven Trapped Charge Migration

Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued...

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Bibliographic Details
Published in:arXiv.org 2020-04
Main Authors: Hou, Yasen, Xiao, Rui, Li, Senlei, Lang, Wang, Yu, Dong
Format: Article
Language:English
Subjects:
Charge transport
Chemical potential
Electric charge
Electric fields
Excitons
Mapping
Modulation
Particulate composites
Photoelectric effect
Photoelectric emission
Quantum computing
Single crystals
Spintronics
Topological insulators
Topology
Trapped charge
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Summary:Topological insulators (TIs) host unusual surface states with Dirac dispersion and helical spin texture and hold high potentials for novel applications in spintronics and quantum computing. Control of the chemical potential in these materials is challenging but crucial to realizing the hotly pursued exotic physics, including efficient spin generation1,2, Majorana Fermions3-5, and exciton condensation6,7. Here we report a simple and effective method that can in-situ tune the chemical potential of single-crystal Bi2-xSbxSe3 nanoribbons, with a magnitude significantly larger than traditional electrostatic gating. An electric field parallel to a device channel can shift the chemical potential across the Dirac point, both inside and outside the channel. We attribute this non-local reversible modulation of chemical potential to electric-field-induced charge hopping among defect states, further supported by photocurrent mapping. Our approach enables engineering chemical potential distributions in TIs and opens up tremendous opportunities for investigating fundamental transport mechanisms of charge and composite particles in these materials.
ISSN:2331-8422