Comparison of Polythophene Memistor Devices Manufactured by Layering and Centrifugal Methods

— The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements mad...

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Bibliographic Details
Published in:Nanotechnologies in Russia 2019-07, Vol.14 (7-8), p.380-384
Main Authors: Prudnikov, N. V., Korovin, A. N., Emelyanov, A. V., Malakhova, Y. N., Demin, V. A., Chvalun, S. N., Erokhin, V. V.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Devices and Products Based on Nanomaterials and Nanotechnologies
Homogeneity
Industrial and Production Engineering
Machines
Manufacturing
Materials Science
Memory devices
Nanotechnology
Polythiophene
Processes
Spin coating
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Summary:— The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements made by spin-coating method have slower switching kinetics, which, presumably, is associated with relatively higher homogeneity of the film surface. This research may be useful for the development of polythiophene memristive devices with reproducible stable characteristics suitable for various applications: from memory elements to wearable and implantable electronics, and neuromorphic computing systems.
ISSN:1995-0780
1995-0799
DOI:10.1134/S1995078019040104