Vital role of Ar ambient pressure in controlled properties of nanocrystalline CdS thin films

A report on the manipulation of structural, optical, and electrical properties of nanocrystalline CdS (ncCdS) thin films in the framework of varying Ar ambient pressure in pulsed laser deposition (PLD) is presented here. Increase in Ar ambient pressure results in reduction of crystallite size which...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2020-05, Vol.31 (9), p.6755-6763
Main Authors: Kumar, Pragati, Saxena, Nupur, Gupta, Vinay
Format: Article
Language:English
Subjects:
Bleaching
Cadmium sulfide
Characterization and Evaluation of Materials
Chemistry and Materials Science
Crystallites
Electrical properties
Hall effect
Materials Science
Nanocrystals
Optical and Electronic Materials
Optical properties
Phase transitions
Photoluminescence
Pressure
Pulsed laser deposition
Pulsed lasers
Thin films
Transport properties
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Summary:A report on the manipulation of structural, optical, and electrical properties of nanocrystalline CdS (ncCdS) thin films in the framework of varying Ar ambient pressure in pulsed laser deposition (PLD) is presented here. Increase in Ar ambient pressure results in reduction of crystallite size which in turns increases the structural imperfections and structural phase transformation of ncCdS thin films. The most significant observation here is the bleaching of multiphonon Raman modes (MRMs) particularly LO + 2E 2 , 2LO + 2E 2 , etc. in ncCdS thin films. An acute investigation on the reason of bleaching of LO + 2E 2 , 2LO + 2E 2 , etc. modes is carried out here and concluded that it is due to the fading of E 2 mode with increasing Ar pressure as confirmed by low-frequency micro-Raman measurements. UV–visible absorption and photoluminescence spectroscopies are used to examine the optical properties like bandgap and possible electronic transitions in ncCdS thin films. Further, transport properties of ncCdS thin films are investigated using Hall measurement and I – V characteristics.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03233-w