Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba + ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(100) free films have been investigated. Specificall...

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Bibliographic Details
Published in:Technical physics 2020, Vol.65 (1), p.114-117
Main Authors: Isakhanov, Z. A., Kosimov, I. O., Umirzakov, B. E., Erkulov, R. M.
Format: Article
Language:English
Subjects:
Annealing
Classical and Continuum Physics
Copper
Crystal structure
Crystals
Electron energy loss spectroscopy
Energy dissipation
Epitaxy
Ion implantation
Metal films
Photoelectrons
Physics
Physics and Astronomy
Physics of Nanostructures
Silicon
Spectrum analysis
Structure
Surface properties
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Summary:Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba + ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(100) free films have been investigated. Specifically, it has been shown that Ba ion implantation and subsequent annealing make it possible to obtain BaSi nanofilms with some excess (to 10 at %) of unbounded silicon atoms.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784220010090