Development of a CMOS-compatible contact technology for III-V materials and Si photonics

In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III-V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-InGaAs III-V materials. In this way, a contact techno...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-07, Vol.59 (SL), p.SL0801
Main Authors: Rodriguez, Philippe, Ghegin, Elodie, Boyer, Flore, Coudurier, Nicolas, Zhiou, Seifeddine, Toselli, Laura, Bensalem, Salma, Jany, Christophe, Szelag, Bertrand, Gergaud, Patrice, Nemouchi, Fabrice
Format: Article
Language:English
Subjects:
Advanced Metallization
CMOS
Compatibility
Contact resistance
Contacts
Electric contacts
III-V Materials
Indium phosphides
Lasers
Metallizing
Metallurgy
Nickel
Photonics
Si Photonics
Silicon
Surface preparation
Titanium
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III-V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-InGaAs III-V materials. In this way, a contact technology fully compatible with a Si-Fab line was developed. The results presented in this manuscript cover a wide scope: from surface preparation and solid-state reaction to electrical results and integration guidelines. The metallurgy of several systems including Ni/InGaAs, Ni/InP, Ti/InGaAs and Ti/InP was studied. The direct metallization of III-V materials using Ni2P was also introduced. Most of the studied metallizations provided efficient solutions for achieving ohmic contacts on n-InP and p-InGaAs. Finally, the contact technology developed in the framework of this study was successfully integrated on 200 mm CMOS-compatible III-V/Si hybrid lasers.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab7f1e