Electron-Electron Interactions in 2D Semiconductor InSe

Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime...

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Bibliographic Details
Published in:arXiv.org 2020-04
Main Authors: Arvind Shankar Kumar, Premasiri, Kasun, Gao, Min, U Rajesh Kumar, Raman Sankar, Fang-Cheng, Chou, Gao, Xuan P A
Format: Article
Language:English
Subjects:
Electron spin
Electrons
Fermi liquids
Hall effect
Magnetoresistance
Magnetoresistivity
Multilayers
Quantum transport
Resistance
Temperature dependence
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Summary:Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter \(F_0^\sigma\) which quantifies the electron spin-exchange interaction strength.
ISSN:2331-8422
DOI:10.48550/arxiv.2004.10879