Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2020-04
Main Authors: Seo, Junho, Eun Su An, Park, Taesu, Soo-Yoon, Hwang, Kim, Gi-Yeop, Song, Kyung, Oh, Eunseok, Choi, Minhyuk, Watanabe, Kenji, Taniguchi, Takashi, Youn, Jung Jo, Yeom, Han Woong, Si-Young, Choi, Shim, Ji Hoon, Jun Sung Kim
Format: Article
Language:English
Subjects:
Antiferromagnetism
Configurations
Electrical conduction
Interlayers
Magnetic anisotropy
Magnetism
Magnets
Spintronics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW antiferromagnets are expected to have several advantages over the widely-studied insulating counterparts in switching and detecting the spin states through electrical currents but have been much less explored due to the lack of suitable materials. Here, utilizing the extreme sensitivity of the vdW interlayer magnetism to material composition, we report the itinerant antiferromagnetism in Co-doped Fe4GeTe2 with TN ~ 210 K, an order of magnitude increased as compared to other known AFM vdW metals. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, temperature, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets with tunable interlayer exchange interaction and magnetic anisotropy, suitable for AFM spintronic applications.
ISSN:2331-8422