Coupling modeling and bandpass filter design using electric and magnetic couplings on CMOS 65nm technology

This letter presents the electric and magnetic couplings modeling on CMOS 65 nm technology. It is based on the simplified equivalent substrate model. The field distribution is studied to analyze qualitatively the electric and magnetic couplings. Based on CMOS 65 nm technology, the coupling coefficie...

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Bibliographic Details
Published in:Microwave and optical technology letters 2020-07, Vol.62 (7), p.2458-2462
Main Authors: Jin‐Chao Mou, Di‐Si Wu, Li, Yuan Chun
Format: Article
Language:English
Subjects:
Bandpass filters
CMOS
Computer simulation
Coupling coefficients
Couplings
Filter design (mathematics)
Insertion loss
Modelling
Substrates
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Summary:This letter presents the electric and magnetic couplings modeling on CMOS 65 nm technology. It is based on the simplified equivalent substrate model. The field distribution is studied to analyze qualitatively the electric and magnetic couplings. Based on CMOS 65 nm technology, the coupling coefficients with and without passivation are calculated quantitatively for comparisons and then the coupling characteristics are summarized. In order to demonstrate the coupling model, a bandpass filter using electric and magnetic couplings is designed. The measured bandwidth is 23 GHz centered at 63.5 GHz and the insertion loss is 3.8 dB. Good agreement between the simulated and measured results validates the coupling modeling.
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.32344