Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures

A lumped model of the dynamics of the controlled switching of high- Q closed-mode structures in rectangular large cavities (up to 1 × 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure du...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-05, Vol.54 (5), p.581-586
Main Authors: Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Gallium arsenide
Gallium arsenide lasers
Heterostructures
Indium gallium arsenides
Lasers
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Propagation modes
Stark effect
Switching
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Summary:A lumped model of the dynamics of the controlled switching of high- Q closed-mode structures in rectangular large cavities (up to 1 × 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620050097