First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an a...

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Bibliographic Details
Published in:Physical review letters 2020-05, Vol.124 (18), p.1
Main Authors: Roch, Jonas G, Miserev, Dmitry, Froehlicher, Guillaume, Leisgang, Nadine, Sponfeldner, Lukas, Watanabe, Kenji, Taniguchi, Takashi, Klinovaja, Jelena, Loss, Daniel, Warburton, Richard J
Format: Article
Language:English
Subjects:
Electron density
Electrons
Ferromagnetic phases
Ferromagnetism
Magnetism
Molybdenum disulfide
Monolayers
Optical communication
Phase transitions
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Summary:Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.124.187602