Functional nano-structuring of thin silicon nitride membranes

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures...

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Bibliographic Details
Published in:Journal of Electrical Engineering 2020-04, Vol.71 (2), p.127-130
Main Authors: Matějka, Milan, Krátký, Stanislav, Řiháček, Tomáš, Knápek, Alexandr, Kolařík, Vladimír
Format: Article
Language:English
Subjects:
Electron beam lithography
electron optics
membrane
Membranes
microfabrication
nano optical device
Physical vapor deposition
Reactive ion etching
silicon etching
Silicon nitride
Single crystals
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Summary:The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.
ISSN:1339-309X
1335-3632
1339-309X
DOI:10.2478/jee-2020-0019