Role of Readsorption in the Formation of Vertical AIIIBV Nanowires with Self-Catalytic Growth

Using Monte Carlo simulations, we studied the effect of readsorption on the growth rate and morphology of A III B V nanowires. It is demonstrated that readsorption of arsenic leads to an increase in the growth rate and premature consumption of a seed drop. The reabsorption of metal atoms leads to a...

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Bibliographic Details
Published in:Russian microelectronics 2020, Vol.49 (3), p.166-172
Main Authors: Nastovjak, A. G., Usenkova, A. G., Shwartz, N. L., Neizvestny, I. G.
Format: Article
Language:English
Subjects:
Computer simulation
Diffusion
Diffusion length
Electrical Engineering
Engineering
Morphology
Nanowires
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Summary:Using Monte Carlo simulations, we studied the effect of readsorption on the growth rate and morphology of A III B V nanowires. It is demonstrated that readsorption of arsenic leads to an increase in the growth rate and premature consumption of a seed drop. The reabsorption of metal atoms leads to a slowdown in the axial growth but prolongs the growth, since it prevents the droplet from disappearing after the length of the nanowire reaches the diffusion length of the metal atoms along the side walls of the wire. It is demonstrated that it is possible to increase the diffusion length of group III elements along the side walls of the nanowire using the pulsed growth mode.
ISSN:1063-7397
1608-3415
DOI:10.1134/S106373972003004X